DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Yeonsung | ko |
dc.contributor.author | Omkaram, Inturu | ko |
dc.contributor.author | Park, Jozeph | ko |
dc.contributor.author | Kim, Hyun-Suk | ko |
dc.contributor.author | Kyung, Ki-Uk | ko |
dc.contributor.author | Park, Wook | ko |
dc.contributor.author | Kim, Sunkook | ko |
dc.date.accessioned | 2018-02-21T05:11:35Z | - |
dc.date.available | 2018-02-21T05:11:35Z | - |
dc.date.created | 2018-01-23 | - |
dc.date.created | 2018-01-23 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.36, no.1, pp.41 - 43 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/239972 | - |
dc.description.abstract | This letter presents a highly sensitive near-infrared (IR) a -Si:H phototransistor for touch sensor applications. The narrow bandgap of a-Si exhibits a wideband spectrum response from IR to ultraviolet region, where the IR bandpass filter layers allow the a -Si:H phototransistor to respond to the selective IR light uninterrupted by visible light. The time-resolved photoresponse and transfer I V characteristics for the near-IR a -Si:H phototransistor as a function of power at 785-nm illumination allow the observation of fast photoresponse (tau similar to 0.1 ps), high external quantum efficiency (7.52), and high photoresponse. A prototype unit pixel structure for touch sensors composed of amorphous Si-based switching/amplification/near-IR phototransistors and a storage capacitor, is proposed and designed. The overall results suggest that the near-IR a -Si:H phototransistor offers unique possibilities for user-friendly, low-cost, and large-area touch sensors, especially aimed at consumer applications and other areas of optoelectronics. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | ARRAYS | - |
dc.title | A alpha-Si: H Thin-Film Phototransistor for a Near-Infrared Touch Sensor | - |
dc.type | Article | - |
dc.identifier.wosid | 000347045200015 | - |
dc.identifier.scopusid | 2-s2.0-84920182680 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 41 | - |
dc.citation.endingpage | 43 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2014.2367118 | - |
dc.contributor.localauthor | Kyung, Ki-Uk | - |
dc.contributor.nonIdAuthor | Lee, Yeonsung | - |
dc.contributor.nonIdAuthor | Omkaram, Inturu | - |
dc.contributor.nonIdAuthor | Park, Jozeph | - |
dc.contributor.nonIdAuthor | Kim, Hyun-Suk | - |
dc.contributor.nonIdAuthor | Park, Wook | - |
dc.contributor.nonIdAuthor | Kim, Sunkook | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | alpha-Si:H | - |
dc.subject.keywordAuthor | IR sensor | - |
dc.subject.keywordAuthor | phototransistor | - |
dc.subject.keywordAuthor | touch sensor | - |
dc.subject.keywordPlus | ARRAYS | - |
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