Al 그리드와 ZnO 투명전도막 의 공정변화에 따른 Cu(In,Ga)Se2 박막태양전지의 특성 연구Effect of Process Variation of Al Grid and ZnO Transparent Electrode on the Performance of Cu(In,Ga)Se2 Solar Cells
CIGS solar cell consisted of various films. In this research, we investigated electrode materials in Cu(In,Ga)Se2 (CIGS)
cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at
200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was
5.2x10-4 Ω·cm by the rapid thermal annealing at 200°C for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high
resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with O2/(Ar+O2) ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.