18% 효율 Cu(In,Ga)Se2 박막태양전지용 ZnSnO 버퍼층의 원자층 증착법 및 분석Characterization of Atomic-Layer Deposited ZnSnO Buffer Layer for 18%- Efficiency Cu(In,Ga)Se2 Solar Cells

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dc.contributor.author김선철ko
dc.contributor.author김승태ko
dc.contributor.author안병태ko
dc.date.accessioned2018-02-21T05:11:08Z-
dc.date.available2018-02-21T05:11:08Z-
dc.date.created2018-01-15-
dc.date.created2018-01-15-
dc.date.issued2015-06-
dc.identifier.citationCurrent Photovoltaic Research, v.3, no.2, pp.54 - 60-
dc.identifier.issn2288-3274-
dc.identifier.urihttp://hdl.handle.net/10203/239965-
dc.description.abstractZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc (Zn(C2H5)2) and tetrakis (dimethylamino) tin (Sn(C2H6N)4) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and SnO2 ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.-
dc.languageKorean-
dc.publisherKorea Photovoltaic Society-
dc.title18% 효율 Cu(In,Ga)Se2 박막태양전지용 ZnSnO 버퍼층의 원자층 증착법 및 분석-
dc.title.alternativeCharacterization of Atomic-Layer Deposited ZnSnO Buffer Layer for 18%- Efficiency Cu(In,Ga)Se2 Solar Cells-
dc.typeArticle-
dc.type.rimsART-
dc.citation.volume3-
dc.citation.issue2-
dc.citation.beginningpage54-
dc.citation.endingpage60-
dc.citation.publicationnameCurrent Photovoltaic Research-
dc.contributor.localauthor안병태-
dc.description.isOpenAccessN-
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