Design considerations of GaInNAs-GaAs quantum wells: Effects of indium and nitrogen mole fractions

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The influences of In and N compositions on the optical gain characteristics of a GaInNAs-GaAs single quantum well are studied theoretically for the first time. When compared with GaInAs, GaInNAs shows a higher optical gain and a longer emission wavelength, under the condition of identical strain. For a given operating wavelength, the higher-In GaInNAs quantum well exhibits a larger optical gain and a smaller carrier leakage than the higher-N GaInNAs quantum well. For example, more than a two-fold improvement in threshold current is expected from the higher-In Ga0.6In0.4N0.01As0.99 quantum well laser than the higher-N Ga0.75In0.25N0.02As0.98 quantum well laser operating at 1.3 mu m.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1998-11
Language
English
Article Type
Article
Keywords

LASERS; OPERATION; SUBSTRATE

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.11, pp.5994 - 5996

ISSN
0021-4922
URI
http://hdl.handle.net/10203/23876
Appears in Collection
PH-Journal Papers(저널논문)
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