A D-Band Low-Power Gain-Boosted Up-Conversion Mixer With Low LO Power in 40-nm CMOS Technology

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This letter presents a D-band low-power gain-boosted up-conversion mixer using the 40-nm complementary metal-oxide-semiconductor technology. The proposed up-conversion mixer adopted gain-boost technique to improve conversion gain with a low local oscillator (LO) power. The resistive-feedback inverter was employed for wideband matching at intermediate-frequency ports. Broadband Marchand baluns were used to transform a single-ended signal to a differential signal at the RF and LO ports for measurement. The proposed up-conversion mixer demonstrated a measured conversion gain of -5 dB ± 1 dB at frequencies from 105 to 135 GHz with an ultralow LO power of -10 dBm. The average LO-RF isolation was -35 dB. The measured input P1dB compression point was -7.5 dBm. This core chip occupies 560 x 400 μm² and the total power consumption is 9 mW from a 1-V supply voltage.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2017-12
Language
English
Article Type
Article
Citation

IEEE Microwave and Wireless Components Letters, v.27, no.12, pp.1113 - 1115

ISSN
1531-1309
DOI
10.1109/LMWC.2017.2763753
URI
http://hdl.handle.net/10203/237689
Appears in Collection
EE-Journal Papers(저널논문)
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