Method for fabricating epitaxial cobalt-disilicide layers using cobalt-nitride thin film

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A method for fabricating epitaxial cobalt disilicide layers uses a cobalt-nitride thin film. Epitaxial cobalt disilicide (CoSi2) layers are fabricated using a cobalt-nitride thin film in a salicide process, wherein a silicide is formed on source/drain regions and a polysilicon gate electrode of a nanoscale MOS transistor. Epitaxial CoSi2 layers can be fabricated on source/drain regions and a gate electrode of a silicon substrate using a cobalt-nitride thin film, without the formation of an interlayer between a cobalt layer and the silicon substrate.
Assignee
Korea Advanced Institute of Science and Technology
Country
US (United States)
Issue Date
2006-09-12
Application Date
2004-12-10
Application Number
11008671
Registration Date
2006-09-12
Registration Number
7105443
URI
http://hdl.handle.net/10203/236266
Appears in Collection
MS-Patent(특허)
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