DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Kwi-Il | ko |
dc.contributor.author | Lee, Sang Yong | ko |
dc.contributor.author | Kim, Seungjun | ko |
dc.contributor.author | Chang, Jaemyung | ko |
dc.contributor.author | Kang, Suk-Joong L | ko |
dc.contributor.author | Lee, Keonjae | ko |
dc.date.accessioned | 2011-04-21T05:34:43Z | - |
dc.date.available | 2011-04-21T05:34:43Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-04 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.7, pp.57 - 59 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/23312 | - |
dc.description.abstract | This article describes a fabrication procedure of high performance flexible ferroelectric materials supported on plastic substrates and the characterization of BaTiO(3) thin films on flexible substrates. Ferroelectric BaTiO(3) thin film was deposited using radio-frequency magnetron sputtering on a Pt/Ti/SiO(2)/(100) Si substrate and annealed at 700 degrees C for crystallization. The metal-insulator (BaTiO(3))-metal structure was successfully transferred onto flexible substrates by the standard microfabrication and soft lithographic printing methods after removing the underlying sacrificial TiO(2) layer by buffered oxide etchant etching. The dielectric constant of the BaTiO(3) thin films on the flexible substrate was comparable with that on a bulk Si substrate. No significant change in dielectric constant was observed upon bending with various radii and debending. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3407622] All rights reserved. | - |
dc.description.sponsorship | This work was supported by the Basic Science Research Program grant code: 2009-0068063, CAFDC-2010-0009903, Pioneer Research Center Program grant code: 2009-0093758, and Fundamental R&D Program for Core Technology of Materials grant code: R17-2008-005-01001-0 through the National Research Foundation of Korea NRF funded by the Ministry of Education, Science and Technology. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | LARGE-AREA | - |
dc.subject | PRINTABLE FORM | - |
dc.subject | BATIO3 FILMS | - |
dc.subject | SILICON | - |
dc.subject | DEPOSITION | - |
dc.subject | RIBBONS | - |
dc.title | Bendable and Transparent Barium Titanate Capacitors on Plastic Substrates for High Performance Flexible Ferroelectric Devices | - |
dc.type | Article | - |
dc.identifier.wosid | 000277558200016 | - |
dc.identifier.scopusid | 2-s2.0-77956219947 | - |
dc.type.rims | ART | - |
dc.citation.volume | 13 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 57 | - |
dc.citation.endingpage | 59 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.identifier.doi | 10.1149/1.3407622 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kang, Suk-Joong L | - |
dc.contributor.localauthor | Lee, Keonjae | - |
dc.contributor.nonIdAuthor | Park, Kwi-Il | - |
dc.contributor.nonIdAuthor | Lee, Sang Yong | - |
dc.contributor.nonIdAuthor | Kim, Seungjun | - |
dc.contributor.nonIdAuthor | Chang, Jaemyung | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | PRINTABLE FORM | - |
dc.subject.keywordPlus | BATIO3 FILMS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | RIBBONS | - |
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