Nitrogen-doped transparent graphene film and manufacturing method thereof질소가 도핑된 투명 그래핀 필름 및 이의 제조방법

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Provided is a transparent graphene film which is prepared by maintaining the primary reduced state of a graphene oxide thin film via chemical reduction, reducing the graphene oxide thin film with chemical vapor deposition, and doping nitrogen, thereby enhancing the conductivity and enabling the control of work function and a manufacturing method thereof. According to the present disclosure, a flexible, transparent, electrical conductivity-enhanced, and work function controllable graphene film can be large area processed and produced in large quantities so that can be applied in real industrial processes by forming a graphene oxide thin film on a substrate, performing the primary chemical reduction using a reducing agent, and performing further the secondary thermal reduction and nitrogen doping by injecting hydrogen and ammonia gas through chemical vapor deposition equipment.
Assignee
KAIST
Country
US (United States)
Issue Date
2014-05-13
Application Date
2011-11-16
Application Number
13298166
Registration Date
2014-05-13
Registration Number
8722442
URI
http://hdl.handle.net/10203/232969
Appears in Collection
MS-Patent(특허)
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