Radiation tolerant dummy gate-assisted n-MOSFET, and method and apparatus for modeling channel of semiconductor device
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Hee-Chul | ko |
| dc.contributor.author | Lee, Min Su | ko |
| dc.date.accessioned | 2017-12-20T10:50:03Z | - |
| dc.date.available | 2017-12-20T10:50:03Z | - |
| dc.date.issued | 2014-12-09 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/232887 | - |
| dc.title | Radiation tolerant dummy gate-assisted n-MOSFET, and method and apparatus for modeling channel of semiconductor device | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | Lee, Hee-Chul | - |
| dc.contributor.nonIdAuthor | Lee, Min Su | - |
| dc.contributor.assignee | KAIST | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 14101505 | - |
| dc.identifier.patentRegistrationNumber | 8907380 | - |
| dc.date.application | 2013-12-10 | - |
| dc.date.registration | 2014-12-09 | - |
| dc.publisher.country | US | - |
- Appears in Collection
- EE-Patent(특허)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.