Radiation tolerant dummy gate-assisted n-MOSFET, and method and apparatus for modeling channel of semiconductor device

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Assignee
KAIST
Country
US (United States)
Issue Date
2014-12-09
Application Date
2013-12-10
Application Number
14101505
Registration Date
2014-12-09
Registration Number
8907380
URI
http://hdl.handle.net/10203/232887
Appears in Collection
EE-Patent(특허)
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