Method of forming fine patterns using a block copolymer블록 코폴리머를 사용해 미세 패턴을 형성하는 방법

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A method of patterning a substrate includes processing first regions of the substrate to form a first pattern, the first regions defining a second region between adjacent first regions, arranging a block copolymer on the first and second regions, the block copolymer including a first component and a second component, the first component of the block copolymer being aligned on the first regions, and selectively removing one of the first component and the second component of the block copolymer to form a second pattern having a pitch that is less than a pitch of a first region and an adjacent second region.
Assignee
KAIST, SAMSUNG ELECTRONICS CO LTD
Country
US (United States)
Issue Date
2013-03-19
Application Date
2011-09-20
Application Number
13236945
Registration Date
2013-03-19
Registration Number
8399174
URI
http://hdl.handle.net/10203/229583
Appears in Collection
MS-Patent(특허)
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