Bistability of Hydrogen in ZnO: Origin of Doping Limit and Persistent Photoconductivity

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dc.contributor.authorNahm, Ho Hyunko
dc.contributor.authorPark, CHko
dc.contributor.authorKim, Yong-Sungko
dc.date.accessioned2017-12-19T03:11:32Z-
dc.date.available2017-12-19T03:11:32Z-
dc.date.created2017-12-08-
dc.date.created2017-12-08-
dc.date.issued2014-
dc.identifier.citationSCIENTIFIC REPORTS, v.4-
dc.identifier.issn2045-2322-
dc.identifier.urihttp://hdl.handle.net/10203/228673-
dc.description.abstractSubstitutional hydrogen at oxygen site (H-O) is well-known to be a robust source of n-type conductivity in ZnO, but a puzzling aspect is that the doping limit by hydrogen is only about 10(18) cm(-3), even if solubility limit is much higher. Another puzzling aspect of ZnO is persistent photoconductivity, which prevents the wide applications of the ZnO-based thin film transistor. Up to now, there is no satisfactory theory about two puzzles. We report the bistability of H-O in ZnO through first-principles electronic structure calculations. We find that as Fermi level is close to conduction bands, the H-O can undergo a large lattice relaxation, through which a deep level can be induced, capturing electrons and the deep state can be transformed into shallow donor state by a photon absorption. We suggest that the bistability can give explanations to two puzzling aspects.-
dc.languageEnglish-
dc.publisherNATURE PUBLISHING GROUP-
dc.subjectAUGMENTED-WAVE METHOD-
dc.subjectZINC-OXIDE-
dc.subjectSEMICONDUCTORS-
dc.subjectPLASMA-
dc.titleBistability of Hydrogen in ZnO: Origin of Doping Limit and Persistent Photoconductivity-
dc.typeArticle-
dc.identifier.wosid000331401100008-
dc.identifier.scopusid2-s2.0-84894334046-
dc.type.rimsART-
dc.citation.volume4-
dc.citation.publicationnameSCIENTIFIC REPORTS-
dc.identifier.doi10.1038/srep04124-
dc.contributor.localauthorNahm, Ho Hyun-
dc.contributor.nonIdAuthorPark, CH-
dc.contributor.nonIdAuthorKim, Yong-Sung-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusAUGMENTED-WAVE METHOD-
dc.subject.keywordPlusZINC-OXIDE-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusPLASMA-
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