DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nahm, Ho Hyun | ko |
dc.contributor.author | Park, CH | ko |
dc.contributor.author | Kim, Yong-Sung | ko |
dc.date.accessioned | 2017-12-19T03:11:32Z | - |
dc.date.available | 2017-12-19T03:11:32Z | - |
dc.date.created | 2017-12-08 | - |
dc.date.created | 2017-12-08 | - |
dc.date.created | 2017-12-08 | - |
dc.date.issued | 2014-02 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v.4 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://hdl.handle.net/10203/228673 | - |
dc.description.abstract | Substitutional hydrogen at oxygen site (H-O) is well-known to be a robust source of n-type conductivity in ZnO, but a puzzling aspect is that the doping limit by hydrogen is only about 10(18) cm(-3), even if solubility limit is much higher. Another puzzling aspect of ZnO is persistent photoconductivity, which prevents the wide applications of the ZnO-based thin film transistor. Up to now, there is no satisfactory theory about two puzzles. We report the bistability of H-O in ZnO through first-principles electronic structure calculations. We find that as Fermi level is close to conduction bands, the H-O can undergo a large lattice relaxation, through which a deep level can be induced, capturing electrons and the deep state can be transformed into shallow donor state by a photon absorption. We suggest that the bistability can give explanations to two puzzling aspects. | - |
dc.language | English | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.subject | AUGMENTED-WAVE METHOD | - |
dc.subject | ZINC-OXIDE | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | PLASMA | - |
dc.title | Bistability of Hydrogen in ZnO: Origin of Doping Limit and Persistent Photoconductivity | - |
dc.type | Article | - |
dc.identifier.wosid | 000331401100008 | - |
dc.identifier.scopusid | 2-s2.0-84894334046 | - |
dc.type.rims | ART | - |
dc.citation.volume | 4 | - |
dc.citation.publicationname | SCIENTIFIC REPORTS | - |
dc.identifier.doi | 10.1038/srep04124 | - |
dc.contributor.localauthor | Nahm, Ho Hyun | - |
dc.contributor.nonIdAuthor | Park, CH | - |
dc.contributor.nonIdAuthor | Kim, Yong-Sung | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | AUGMENTED-WAVE METHOD | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | PLASMA | - |
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