Hydrogen-induced anomalous Hall effect in Co-doped ZnO

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dc.contributor.authorCho, Yong Chanko
dc.contributor.authorLee, Seunghunko
dc.contributor.authorPark, Ji Hunko
dc.contributor.authorKim, Won Kyoungko
dc.contributor.authorNahm, Ho-Hyunko
dc.contributor.authorPark, Chul Hongko
dc.contributor.authorJeong, Se-Youngko
dc.date.accessioned2017-12-19T03:11:28Z-
dc.date.available2017-12-19T03:11:28Z-
dc.date.created2017-12-08-
dc.date.created2017-12-08-
dc.date.issued2014-07-
dc.identifier.citationNEW JOURNAL OF PHYSICS, v.16-
dc.identifier.issn1367-2630-
dc.identifier.urihttp://hdl.handle.net/10203/228670-
dc.description.abstractThe electrical transport characteristics and anomalous Hall effect (AHE) were investigated for a hydrogen-injected Co-doped ZnO thin film. Based on the measurements of resistivity and the Hall effect between 5 K and 300 K, the existence of Co-H-Co complexes was observed to introduce the AHE and enable the AHE to persist up to room temperature. The observed H-induced AHE originates from the asymmetric scattering of carrier hopping between the localized states driven by ferromagnetic Co-H-Co complexes, and a theoretical study using first-principle calculations supports the experimental results well. This large ferromagnetic response of charge carriers by the hydrogen-induced AHE on semiconducting oxides will stimulate the further investigation of room-temperature spintronic applications.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.subjectROOM-TEMPERATURE FERROMAGNETISM-
dc.subjectMAGNETIC SEMICONDUCTORS-
dc.subjectTITANIUM-DIOXIDE-
dc.subjectDESIGN-
dc.titleHydrogen-induced anomalous Hall effect in Co-doped ZnO-
dc.typeArticle-
dc.identifier.wosid000339475400002-
dc.identifier.scopusid2-s2.0-84905192246-
dc.type.rimsART-
dc.citation.volume16-
dc.citation.publicationnameNEW JOURNAL OF PHYSICS-
dc.identifier.doi10.1088/1367-2630/16/7/073030-
dc.contributor.localauthorNahm, Ho-Hyun-
dc.contributor.nonIdAuthorCho, Yong Chan-
dc.contributor.nonIdAuthorLee, Seunghun-
dc.contributor.nonIdAuthorPark, Ji Hun-
dc.contributor.nonIdAuthorKim, Won Kyoung-
dc.contributor.nonIdAuthorPark, Chul Hong-
dc.contributor.nonIdAuthorJeong, Se-Young-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoranomalous Hall effect-
dc.subject.keywordAuthorhydrogen mediated ferromagnetism-
dc.subject.keywordAuthorCo-doped ZnO-
dc.subject.keywordPlusROOM-TEMPERATURE FERROMAGNETISM-
dc.subject.keywordPlusMAGNETIC SEMICONDUCTORS-
dc.subject.keywordPlusTITANIUM-DIOXIDE-
dc.subject.keywordPlusDESIGN-
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