Hydrogen-induced anomalous Hall effect in Co-doped ZnO

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The electrical transport characteristics and anomalous Hall effect (AHE) were investigated for a hydrogen-injected Co-doped ZnO thin film. Based on the measurements of resistivity and the Hall effect between 5 K and 300 K, the existence of Co-H-Co complexes was observed to introduce the AHE and enable the AHE to persist up to room temperature. The observed H-induced AHE originates from the asymmetric scattering of carrier hopping between the localized states driven by ferromagnetic Co-H-Co complexes, and a theoretical study using first-principle calculations supports the experimental results well. This large ferromagnetic response of charge carriers by the hydrogen-induced AHE on semiconducting oxides will stimulate the further investigation of room-temperature spintronic applications.
Publisher
IOP PUBLISHING LTD
Issue Date
2014-07
Language
English
Article Type
Article
Keywords

ROOM-TEMPERATURE FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; TITANIUM-DIOXIDE; DESIGN

Citation

NEW JOURNAL OF PHYSICS, v.16

ISSN
1367-2630
DOI
10.1088/1367-2630/16/7/073030
URI
http://hdl.handle.net/10203/228670
Appears in Collection
NT-Journal Papers(저널논문)
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