Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4

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dc.contributor.authorNahm, Ho-Hyunko
dc.contributor.authorKim, Yong-Sungko
dc.date.accessioned2017-12-19T03:11:27Z-
dc.date.available2017-12-19T03:11:27Z-
dc.date.created2017-12-08-
dc.date.created2017-12-08-
dc.date.issued2014-11-
dc.identifier.citationNPG ASIA MATERIALS, v.6-
dc.identifier.issn1884-4049-
dc.identifier.urihttp://hdl.handle.net/10203/228669-
dc.description.abstractUndercoordinated indium (In*) is found to be an intrinsic defect that acts as a strong electron trap in amorphous InGaZnO4. Conduction electrons couple with the under-coordinated In* via Coulomb attraction, which is the driving force for the formation of an In*-M (M=In, Ga, or Zn) bond. The new structure is stable in the electron-trapped (2-) charge state, and we designate it as an intrinsic (In*-M)(2-) center in amorphous InGaZnO4. The (In*-M)(2-) centers are preferentially formed in heavily n-doped samples, resulting in a doping limit. They are also formed by electrical/optical stresses, which generate excited electrons, resulting in a metastable change in their electrical properties.-
dc.languageEnglish-
dc.publisherNATURE PUBLISHING GROUP-
dc.subjectGA-ZN-O-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectTOTAL-ENERGY CALCULATIONS-
dc.subjectWAVE BASIS-SET-
dc.subjectOXIDE SEMICONDUCTOR-
dc.subjectDX CENTERS-
dc.subjectINSTABILITY-
dc.subjectALXGA1-XAS-
dc.subjectSTRESS-
dc.subjectORIGIN-
dc.titleUndercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4-
dc.typeArticle-
dc.identifier.wosid000345670900002-
dc.identifier.scopusid2-s2.0-84927710649-
dc.type.rimsART-
dc.citation.volume6-
dc.citation.publicationnameNPG ASIA MATERIALS-
dc.identifier.doi10.1038/am.2014.103-
dc.contributor.localauthorNahm, Ho-Hyun-
dc.contributor.nonIdAuthorKim, Yong-Sung-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusGA-ZN-O-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusTOTAL-ENERGY CALCULATIONS-
dc.subject.keywordPlusWAVE BASIS-SET-
dc.subject.keywordPlusOXIDE SEMICONDUCTOR-
dc.subject.keywordPlusDX CENTERS-
dc.subject.keywordPlusINSTABILITY-
dc.subject.keywordPlusALXGA1-XAS-
dc.subject.keywordPlusSTRESS-
dc.subject.keywordPlusORIGIN-
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