Light-Induced Peroxide Formation in ZnO: Origin of Persistent Photoconductivity

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dc.contributor.authorKang, Younghoko
dc.contributor.authorNahm, Ho-Hyunko
dc.contributor.authorHan, Seungwuko
dc.date.accessioned2017-12-19T03:11:12Z-
dc.date.available2017-12-19T03:11:12Z-
dc.date.created2017-12-08-
dc.date.created2017-12-08-
dc.date.issued2016-10-
dc.identifier.citationSCIENTIFIC REPORTS, v.6-
dc.identifier.issn2045-2322-
dc.identifier.urihttp://hdl.handle.net/10203/228663-
dc.description.abstractThe persistent photoconductivity (PPC) in ZnO has been a critical problem in opto-electrical devices employing ZnO such as ultraviolet sensors and thin film transistors for the transparent display. While the metastable state of oxygen vacancy (V-O) is widely accepted as the microscopic origin of PPC, recent experiments on the influence of temperature and oxygen environments are at variance with the V-O model. In this study, using the density-functional theory calculations, we propose a novel mechanism of PPC that involves the hydrogen-zinc vacancy defect complex (2H-V-Zn). We show that a substantial amount of 2H-V-Zn can exist during the growth process due to its low formation energy. The light absorption of 2H-V-Zn leads to the metastable state that is characterized by the formation of O-2(2-) (peroxide) around the defect, leaving the free carriers in the conduction band. Furthermore, we estimate the lifetime of photo-electrons to be similar to 20 secs, which is similar to the experimental observation. Our model also explains the experimental results showing that PPC is enhanced (suppressed) in oxygen-rich (low-temperature) conditions. By revealing a convincing origin of PPC in ZnO, we expect that the present work will pave the way for optimizing optoelectronic properties of ZnO.-
dc.languageEnglish-
dc.publisherNATURE PUBLISHING GROUP-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectAB-INITIO-
dc.subjectDEFECTS-
dc.titleLight-Induced Peroxide Formation in ZnO: Origin of Persistent Photoconductivity-
dc.typeArticle-
dc.identifier.wosid000385352700001-
dc.type.rimsART-
dc.citation.volume6-
dc.citation.publicationnameSCIENTIFIC REPORTS-
dc.identifier.doi10.1038/srep35148-
dc.contributor.localauthorNahm, Ho-Hyun-
dc.contributor.nonIdAuthorKang, Youngho-
dc.contributor.nonIdAuthorHan, Seungwu-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusAB-INITIO-
dc.subject.keywordPlusDEFECTS-
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