Schottky Tunneling Effects in a Tunnel FET

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dc.contributor.authorHur, Jaeko
dc.contributor.authorJeong, Woo Jinko
dc.contributor.authorShin, Mincheolko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2017-12-19T00:57:34Z-
dc.date.available2017-12-19T00:57:34Z-
dc.date.created2017-11-29-
dc.date.created2017-11-29-
dc.date.issued2017-12-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.12, pp.5223 - 5229-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/228430-
dc.description.abstractTunnel FETs (TFETs) have attracted a great deal of attention due to their steep subthreshold swing (SS) of less than 60 mV/dec, which overcomes the theoretical constraint imposed by the thermal limit in a conventional inversion-mode (IM) FET. Based on its advantages as a short-channel device with low stand-by power consumption, TFETs shows promise to replace IM-FETs. As the channel length is shortened to minimize the total gate pitch; however, the gate sidewall spacer is miniaturized as well. In this paper, the influence of junction extension length (L-ext) on TFET behavior is discussed where the length of the gate spacer is assumed to be the gap between the source and drain (S/D) electrodes and the gate edge. It was found that, when L-ext is aggressively scaled down, having S/D electrodes (silicide or metal) with identical work functions (WFs) leads to a severely high OFF-current (I-OFF) and high SS. By adopting separate asymmetric WFs for the p-type and n-type S/D electrodes, the on/off characteristics were improved with suppressed IOFF and steeper slopes. Itwas also shownthat thedeviceperformanceof a TFET with higher source-side doping concentrations (similar to 5 x10(20) cm(-3)) can be further improved even at the aggressively scaled-down L-ext by boosting the on-current.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectDESIGN-
dc.subjectANNEAL-
dc.subjectTFETS-
dc.subjectNM-
dc.titleSchottky Tunneling Effects in a Tunnel FET-
dc.typeArticle-
dc.identifier.wosid000417727500059-
dc.identifier.scopusid2-s2.0-85031797851-
dc.type.rimsART-
dc.citation.volume64-
dc.citation.issue12-
dc.citation.beginningpage5223-
dc.citation.endingpage5229-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2017.2757260-
dc.contributor.localauthorShin, Mincheol-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorBand-to-band tunneling (BTBT)-
dc.subject.keywordAuthortunnel FET (TFET)-
dc.subject.keywordAuthoruniversal Schottky tunneling (UST)-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusDESIGN-
dc.subject.keywordPlusANNEAL-
dc.subject.keywordPlusTFETS-
dc.subject.keywordPlusNM-
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