Thermal Conductivity and Thermal Boundary Resistances of ALD Al2O3 Films on Si and Sapphire

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dc.contributor.authorLee, Seung-Minko
dc.contributor.authorChoi, Won Chulko
dc.contributor.authorKim, Junsooko
dc.contributor.authorKim, Taekwangko
dc.contributor.authorLee, Jaewooko
dc.contributor.authorIm, Sol Yeeko
dc.contributor.authorKwon, Jung Yoonko
dc.contributor.authorSeo, Sunaeko
dc.contributor.authorShin, Mincheolko
dc.contributor.authorMoon, Seung Eonko
dc.date.accessioned2017-12-19T00:57:30Z-
dc.date.available2017-12-19T00:57:30Z-
dc.date.created2017-11-29-
dc.date.created2017-11-29-
dc.date.issued2017-12-
dc.identifier.citationINTERNATIONAL JOURNAL OF THERMOPHYSICS, v.38, no.176-
dc.identifier.issn0195-928X-
dc.identifier.urihttp://hdl.handle.net/10203/228429-
dc.description.abstractOn Si and sapphire substrates, 6-45 nm thick films of atomic layerdeposited Al2O3 were grown. The thermal conductivity of ALD films has been determined from a linear relation between film thickness and thermal resistance measured by the 3 omega method. ALD films on Si and sapphire showed almost same thermal conductivity in the temperature range of 50-350 K. Residual thermal resistance was also obtained by extrapolation of the linear fit and was modeled as a sum of the thermal boundary resistances at heater-film and film-substrate interfaces. The total thermal resistance addenda for films on sapphire was close to independently measured thermal boundary resistance of heater-sapphire interface. From the result, it was deduced that the thermal boundary resistance at ALD Al2O3-sapphire interface was much lower than that of heater-film. By contrast, the films on Si showed significantly larger thermal boundary resistance than films on sapphire. Data of < 30 nm films on Si were excluded because an AC coupling of electrical heating voltage to semiconductive Si complicated the relation between 3 omega voltage and temperature.-
dc.languageEnglish-
dc.publisherSPRINGER/PLENUM PUBLISHERS-
dc.subjectATOMIC LAYER DEPOSITION-
dc.subjectTHIN DIELECTRIC FILMS-
dc.subject3-OMEGA METHOD-
dc.subjectCONDUCTANCE-
dc.subjectTRANSPORT-
dc.subjectALPHA-AL2O3-
dc.subjectGROWTH-
dc.titleThermal Conductivity and Thermal Boundary Resistances of ALD Al2O3 Films on Si and Sapphire-
dc.typeArticle-
dc.identifier.wosid000418909400001-
dc.identifier.scopusid2-s2.0-85032015455-
dc.type.rimsART-
dc.citation.volume38-
dc.citation.issue176-
dc.citation.publicationnameINTERNATIONAL JOURNAL OF THERMOPHYSICS-
dc.identifier.doi10.1007/s10765-017-2308-5-
dc.contributor.localauthorShin, Mincheol-
dc.contributor.nonIdAuthorLee, Seung-Min-
dc.contributor.nonIdAuthorKim, Junsoo-
dc.contributor.nonIdAuthorKim, Taekwang-
dc.contributor.nonIdAuthorLee, Jaewoo-
dc.contributor.nonIdAuthorIm, Sol Yee-
dc.contributor.nonIdAuthorKwon, Jung Yoon-
dc.contributor.nonIdAuthorSeo, Sunae-
dc.contributor.nonIdAuthorMoon, Seung Eon-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthor3 omega method-
dc.subject.keywordAuthorAl2O3-
dc.subject.keywordAuthorAtomic layer deposition-
dc.subject.keywordAuthorThermal boundary resistance-
dc.subject.keywordAuthorThermal conductivity-
dc.subject.keywordPlusATOMIC LAYER DEPOSITION-
dc.subject.keywordPlusTHIN DIELECTRIC FILMS-
dc.subject.keywordPlus3-OMEGA METHOD-
dc.subject.keywordPlusCONDUCTANCE-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusALPHA-AL2O3-
dc.subject.keywordPlusGROWTH-
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