Novel Operation of a Multi-Bit SOT Memory Cell Addressed With a Single Write Line

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dc.contributor.authorBaek, Seung-heon Chrisko
dc.contributor.authorOh, Young Wanko
dc.contributor.authorPark, Byong-Gukko
dc.contributor.authorShin, Mincheolko
dc.date.accessioned2017-11-21T04:05:59Z-
dc.date.available2017-11-21T04:05:59Z-
dc.date.created2017-11-20-
dc.date.created2017-11-20-
dc.date.issued2017-11-
dc.identifier.citationIEEE TRANSACTIONS ON MAGNETICS, v.53, no.11-
dc.identifier.issn0018-9464-
dc.identifier.urihttp://hdl.handle.net/10203/227195-
dc.description.abstractSpin-orbit torque (SOT) originates from the spin-orbit interaction of non-magnetic heavy metals (HMs), allowing for an electrical manipulation of perpendicular magnetization in HM/ferromagnet (FM)/oxide structures. In this paper, we experimentally demonstrate the SOT-induced switching of two FM bits addressed with a single write line. We fabricate a device consisting of two perpendicularly magnetized Ta/CoFeB/MgO structures with a common Ta underlayer, in which the magnetization directions of the two FM bits could be concurrently controlled by injecting a single current pulse. This suggests that multiple bits in SOT-based devices can be written as either "0" or "1" at the same time. Moreover, the selective switching of a specific bit is achieved by differentiating the critical switching currents between the two FM bits, which is crucial in demonstrating multi-level cell SOT memory. Our results provide an efficient writing mechanism, enabling wider applications of SOT-based spintronic devices.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectMAGNETIC TUNNEL-JUNCTIONS-
dc.subjectSPIN-ORBIT TORQUE-
dc.titleNovel Operation of a Multi-Bit SOT Memory Cell Addressed With a Single Write Line-
dc.typeArticle-
dc.identifier.wosid000413981300160-
dc.identifier.scopusid2-s2.0-85032899924-
dc.type.rimsART-
dc.citation.volume53-
dc.citation.issue11-
dc.citation.publicationnameIEEE TRANSACTIONS ON MAGNETICS-
dc.identifier.doi10.1109/TMAG.2017.2710633-
dc.contributor.localauthorPark, Byong-Guk-
dc.contributor.localauthorShin, Mincheol-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorMagnetic memory-
dc.subject.keywordAuthormulti-level cell-
dc.subject.keywordAuthornanomagnet-
dc.subject.keywordAuthorspin-orbit torque (SOT)-
dc.subject.keywordPlusMAGNETIC TUNNEL-JUNCTIONS-
dc.subject.keywordPlusSPIN-ORBIT TORQUE-
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