DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, Seung-heon Chris | ko |
dc.contributor.author | Oh, Young Wan | ko |
dc.contributor.author | Park, Byong-Guk | ko |
dc.contributor.author | Shin, Mincheol | ko |
dc.date.accessioned | 2017-11-21T04:05:59Z | - |
dc.date.available | 2017-11-21T04:05:59Z | - |
dc.date.created | 2017-11-20 | - |
dc.date.created | 2017-11-20 | - |
dc.date.issued | 2017-11 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON MAGNETICS, v.53, no.11 | - |
dc.identifier.issn | 0018-9464 | - |
dc.identifier.uri | http://hdl.handle.net/10203/227195 | - |
dc.description.abstract | Spin-orbit torque (SOT) originates from the spin-orbit interaction of non-magnetic heavy metals (HMs), allowing for an electrical manipulation of perpendicular magnetization in HM/ferromagnet (FM)/oxide structures. In this paper, we experimentally demonstrate the SOT-induced switching of two FM bits addressed with a single write line. We fabricate a device consisting of two perpendicularly magnetized Ta/CoFeB/MgO structures with a common Ta underlayer, in which the magnetization directions of the two FM bits could be concurrently controlled by injecting a single current pulse. This suggests that multiple bits in SOT-based devices can be written as either "0" or "1" at the same time. Moreover, the selective switching of a specific bit is achieved by differentiating the critical switching currents between the two FM bits, which is crucial in demonstrating multi-level cell SOT memory. Our results provide an efficient writing mechanism, enabling wider applications of SOT-based spintronic devices. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | MAGNETIC TUNNEL-JUNCTIONS | - |
dc.subject | SPIN-ORBIT TORQUE | - |
dc.title | Novel Operation of a Multi-Bit SOT Memory Cell Addressed With a Single Write Line | - |
dc.type | Article | - |
dc.identifier.wosid | 000413981300160 | - |
dc.identifier.scopusid | 2-s2.0-85032899924 | - |
dc.type.rims | ART | - |
dc.citation.volume | 53 | - |
dc.citation.issue | 11 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.identifier.doi | 10.1109/TMAG.2017.2710633 | - |
dc.contributor.localauthor | Park, Byong-Guk | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | Magnetic memory | - |
dc.subject.keywordAuthor | multi-level cell | - |
dc.subject.keywordAuthor | nanomagnet | - |
dc.subject.keywordAuthor | spin-orbit torque (SOT) | - |
dc.subject.keywordPlus | MAGNETIC TUNNEL-JUNCTIONS | - |
dc.subject.keywordPlus | SPIN-ORBIT TORQUE | - |
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