Formation of a-plane facets in three-dimensional hexagonal GaN structures for photonic devices

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 255
  • Download : 157
Control of the growth front in three-dimensional (3D) hexagonal GaN core structures is crucial for increased performance of light-emitting diodes (LEDs), and other photonic devices. This is due to the fact that InGaN layers formed on different growth facets in 3D structures exhibit various band gaps which originate from differences in the indium-incorporation efficiency, internal polarization, and growth rate. Here, a-plane {11 (2) over bar0} facets, which are rarely formed in hexagonal pyramid based growth, are intentionally fabricated using mask patterns and adjustment of the core growth conditions. Moreover, the growth area covered by these facets is modified by changing the growth time. The origin of the formation of a-plane {11 (2) over bar0} facets is also discussed. Furthermore, due to a growth condition transition from a 3D core structure to an InGaN multi-quantum well, a growth front transformation (i.e., a transformation of a-plane {11 (2) over bar0} facets to semi-polar {11 (2) over bar2} facets) is directly observed. Based on our understanding and control of this novel growth mechanism, we can achieve efficient broadband LEDs or photovoltaic cells.
Publisher
NATURE PUBLISHING GROUP
Issue Date
2017-08
Language
English
Article Type
Article
Keywords

SELECTIVE-AREA GROWTH; VAPOR-PHASE EPITAXY; SEMICONDUCTORS; SUBSTRATE; PRESSURE

Citation

SCIENTIFIC REPORTS, v.7, pp.9356

ISSN
2045-2322
DOI
10.1038/s41598-017-09782-1
URI
http://hdl.handle.net/10203/225995
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
s41598-017-09782-1.pdf(2.33 MB)Download

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0