DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Myung Keun | ko |
dc.contributor.author | Kim, Choong-Ki | ko |
dc.contributor.author | Park, Jeong Woo | ko |
dc.contributor.author | Kim, Eungtaek | ko |
dc.contributor.author | Seol, Myeong-Lok | ko |
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Choi, Kyung Cheol | ko |
dc.date.accessioned | 2017-08-31T08:59:19Z | - |
dc.date.available | 2017-08-31T08:59:19Z | - |
dc.date.created | 2017-08-28 | - |
dc.date.created | 2017-08-28 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3189 - 3192 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/225588 | - |
dc.description.abstract | Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) fabricated by low-temperature processes on a flexible substrate can easily be degraded by mechanical deformation. Furthermore, lower performance in terms of the initial characteristics and reliability levels compared to those fabricated on glass substrates with relatively high heat treatments is inevitable. To solve these problems, a local electro-thermal annealing (ETA) method was applied to flexible a-IGZO TFTs processed at low temperature to enhance the inferior initial characteristics and reliability under a bending state. The enhancement of the characteristics and reliability by ETA can be attributed to the reduction of defects related to the oxygen through a localized Joule heat treatment with an extremely short duration (similar to 1 ms). In addition, the effectiveness of ETA to recovery from bending stress even under harsh cyclic bending operation (strain condition of 0.833%) is verified. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | AMORPHOUS OXIDE SEMICONDUCTORS | - |
dc.subject | ELECTRONIC-STRUCTURE | - |
dc.title | Electro-Thermal Annealing Method for Recovery of Cyclic Bending Stress in Flexible a-IGZO TFTs | - |
dc.type | Article | - |
dc.identifier.wosid | 000406268900021 | - |
dc.identifier.scopusid | 2-s2.0-85023776725 | - |
dc.type.rims | ART | - |
dc.citation.volume | 64 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 3189 | - |
dc.citation.endingpage | 3192 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2017.2717444 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.localauthor | Choi, Kyung Cheol | - |
dc.contributor.nonIdAuthor | Lee, Myung Keun | - |
dc.contributor.nonIdAuthor | Seol, Myeong-Lok | - |
dc.contributor.nonIdAuthor | Park, Jun-Young | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Bending stress | - |
dc.subject.keywordAuthor | electro-thermal annealing (ETA) | - |
dc.subject.keywordAuthor | flexible In-Ga-Zn-O (a-IGZO) thin-film transistors (TFT) | - |
dc.subject.keywordAuthor | low-temperature process | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | AMORPHOUS OXIDE SEMICONDUCTORS | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.