DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bong, Jae Hoon | ko |
dc.contributor.author | Kim, Seung-Yoon | ko |
dc.contributor.author | Jeong, Chan Bae | ko |
dc.contributor.author | Chang, Ki Soo | ko |
dc.contributor.author | Hwang, Wan Sik | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2017-08-08T06:53:08Z | - |
dc.date.available | 2017-08-08T06:53:08Z | - |
dc.date.created | 2017-08-07 | - |
dc.date.created | 2017-08-07 | - |
dc.date.created | 2017-08-07 | - |
dc.date.created | 2017-08-07 | - |
dc.date.issued | 2017-06 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.110, no.25 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/225242 | - |
dc.description.abstract | Ultra-thin single-crystalline Si membrane transistors on a polymer substrate have drawn attention for flexible electronics applications. However, these devices accompany a reliability issue stemming from severe self-heating because of the inherent poor thermal conductivity of the polymer substrate. In the present study, under an operational condition of V-G = 3V and V-D = 8V, the temperature of the Si membrane transistor on the polymer substrate soared to about 64 degrees C immediately and remained consistently high. The excess heat generated from the active channel significantly degraded the device performance. However, the implementation of a silver heat spreading layer (HSL) between the active channel and the polymer substrate significantly alleviated the self-heating effect as the silver film rapidly spread the generated heat. The efficient heat spreading, monitored via a high resolution infrared thermal microscope, correlated well with the charge transfer characteristics of the device. These results may be helpful to realize high performance flexible devices using a silicon membrane. Published by AIP Publishing. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Reliability improvement of a flexible FD-SOI MOSFET via heat management | - |
dc.type | Article | - |
dc.identifier.wosid | 000404337800014 | - |
dc.identifier.scopusid | 2-s2.0-85021068940 | - |
dc.type.rims | ART | - |
dc.citation.volume | 110 | - |
dc.citation.issue | 25 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4986475 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Jeong, Chan Bae | - |
dc.contributor.nonIdAuthor | Chang, Ki Soo | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | SILICON INTEGRATED-CIRCUITS | - |
dc.subject.keywordPlus | RIBBONS | - |
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