DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sera | ko |
dc.contributor.author | Song, Seunghyun | ko |
dc.contributor.author | Park, Jongho | ko |
dc.contributor.author | Yu, Ho Sung | ko |
dc.contributor.author | Cho, Suyeon | ko |
dc.contributor.author | Kim, Dohyun | ko |
dc.contributor.author | Baik, Jaeyoon | ko |
dc.contributor.author | Choe, Duk-Hyun | ko |
dc.contributor.author | Chang, Kee Joo | ko |
dc.contributor.author | Lee, Young Hee | ko |
dc.contributor.author | Kim, Sung Wng | ko |
dc.contributor.author | YANG, HEEJUN | ko |
dc.date.accessioned | 2017-07-18T06:30:51Z | - |
dc.date.available | 2017-07-18T06:30:51Z | - |
dc.date.created | 2017-07-10 | - |
dc.date.created | 2017-07-10 | - |
dc.date.created | 2017-07-10 | - |
dc.date.issued | 2017-06 | - |
dc.identifier.citation | NANO LETTERS, v.17, no.6, pp.3363 - 3368 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/224867 | - |
dc.description.abstract | Doping two-dimensional (2D) semiconductors beyond their degenerate levels provides the opportunity to investigate extreme carrier density-driven superconductivity and phase transition in 2D systems. Chemical functionalization and the ionic gating have achieved the high doping density, but their effective ranges have been limited to similar to 1 nm, which restricts the use of highly doped 2D semiconductors. Here, we report on electron diffusion from the 2D electride [Ca2N](+)e to MoTe2 over a distance of 100 nm from the contact interface, generating an electron doping density higher than 1.6 x 10(14) cm(2) and a lattice symmetry change of MoTe2 as a consequence of the extreme doping. The long-range lattice symmetry change, suggesting a length scale surpassing the depletion width of conventional metalsemiconductor junctions, was a consequence of the low work function (2.6 eV) with highly mobile anionic electron layers of [Ca2N](+)e . The combination of 2D electrides and layered materials yields a novel material design in terms of doping and lattice engineering. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Long-Range Lattice Engineering of MoTe2 by a 2D Electride | - |
dc.type | Article | - |
dc.identifier.wosid | 000403631600006 | - |
dc.identifier.scopusid | 2-s2.0-85020763070 | - |
dc.type.rims | ART | - |
dc.citation.volume | 17 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 3363 | - |
dc.citation.endingpage | 3368 | - |
dc.citation.publicationname | NANO LETTERS | - |
dc.identifier.doi | 10.1021/acs.nanolett.6b05199 | - |
dc.contributor.localauthor | Chang, Kee Joo | - |
dc.contributor.localauthor | YANG, HEEJUN | - |
dc.contributor.nonIdAuthor | Kim, Sera | - |
dc.contributor.nonIdAuthor | Song, Seunghyun | - |
dc.contributor.nonIdAuthor | Park, Jongho | - |
dc.contributor.nonIdAuthor | Yu, Ho Sung | - |
dc.contributor.nonIdAuthor | Cho, Suyeon | - |
dc.contributor.nonIdAuthor | Kim, Dohyun | - |
dc.contributor.nonIdAuthor | Baik, Jaeyoon | - |
dc.contributor.nonIdAuthor | Lee, Young Hee | - |
dc.contributor.nonIdAuthor | Kim, Sung Wng | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | MoTe2 | - |
dc.subject.keywordAuthor | electride | - |
dc.subject.keywordAuthor | doping | - |
dc.subject.keywordAuthor | phase transition | - |
dc.subject.keywordAuthor | electron diffusion | - |
dc.subject.keywordAuthor | work function | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | PHASE-TRANSITION | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | FRICTION | - |
dc.subject.keywordPlus | STRAIN | - |
dc.subject.keywordPlus | LAYER | - |
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