First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit

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dc.contributor.authorAhn, Yongsooko
dc.contributor.authorShin, Mincheolko
dc.date.accessioned2017-06-05T02:04:08Z-
dc.date.available2017-06-05T02:04:08Z-
dc.date.created2017-05-22-
dc.date.created2017-05-22-
dc.date.issued2017-05-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.5, pp.2129 - 2134-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/223822-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectBLACK PHOSPHORUS-
dc.subjectMOS2 TRANSISTORS-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectHIGH-PERFORMANCE-
dc.subjectMOBILITY-
dc.subjectCAPACITANCE-
dc.subjectDEVICES-
dc.titleFirst-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit-
dc.typeArticle-
dc.identifier.wosid000399935800034-
dc.identifier.scopusid2-s2.0-85017166562-
dc.type.rimsART-
dc.citation.volume64-
dc.citation.issue5-
dc.citation.beginningpage2129-
dc.citation.endingpage2134-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2017.2679217-
dc.contributor.localauthorShin, Mincheol-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorDensity functional theory (DFT)-
dc.subject.keywordAuthorFET-
dc.subject.keywordAuthorindium selenide-
dc.subject.keywordAuthorInSe-
dc.subject.keywordAuthornonequilibrium Green&apos-
dc.subject.keywordAuthors function (NEGF)-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusBLACK PHOSPHORUS-
dc.subject.keywordPlusMOS2 TRANSISTORS-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusCAPACITANCE-
dc.subject.keywordPlusDEVICES-
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