First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit

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Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2017-05
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; BLACK PHOSPHORUS; MOS2 TRANSISTORS; OPTICAL-PROPERTIES; HIGH-PERFORMANCE; MOBILITY; CAPACITANCE; DEVICES

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.5, pp.2129 - 2134

ISSN
0018-9383
DOI
10.1109/TED.2017.2679217
URI
http://hdl.handle.net/10203/223822
Appears in Collection
EE-Journal Papers(저널논문)
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