First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit
- Issue Date
- 2017-05
- Language
- English
- Article Type
- Article
- Keywords
FIELD-EFFECT TRANSISTORS; BLACK PHOSPHORUS; MOS2 TRANSISTORS; OPTICAL-PROPERTIES; HIGH-PERFORMANCE; MOBILITY; CAPACITANCE; DEVICES
- Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.5, pp.2129 - 2134
- ISSN
- 0018-9383
- Appears in Collection
- EE-Journal Papers(저널논문)
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- There are no files associated with this item.
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