Annihilation Behavior of Planar Defects on Phosphorus-Doped Silicon at Low Temperatures

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 392
  • Download : 0
The planar defect behavior and phosphorus (P) diffusion of P-doped silicon (Si) thin film on monocrystalline Si with annealing was investigated by high-resolution transmission electron microscopy. These images indicate that the as-deposited Si thin film crystallizes with many planar defects, such as stacking faults and twin boundaries. Secondary ion mass spectroscopy and atom probe tomography reveal that P atoms are segregated to the planar defects and diffuse out the Si substrate at 600 degrees C. The solubility of P atoms has an influence on the rearrangement of Si atoms, which leads to the annihilation of the defects in the deposited si thin flim
Publisher
AMER SCIENTIFIC PUBLISHERS
Issue Date
2017-05
Language
English
Article Type
Article
Keywords

STACKING-FAULTS; EPITAXIAL LAYER; HEAT-TREATMENT; ELIMINATION

Citation

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3370 - 3374

ISSN
1533-4880
DOI
10.1166/jnn.2017.14021
URI
http://hdl.handle.net/10203/223655
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0