Low-Resistive High-Work-Function Gate Electrode for Transparent a-IGZO TFTs

Abstract

Highly transparent and low-resistive multilayered gate electrodes, MoO3/indium-tin oxide (ITO)/Ag/ZnS (MIAZ) playing as the high-work-function layer, the nonreactive interface layer, the lateral conduction layer, and the index-matching layer, respectively, have been investigated for the application to the transparent oxide thin-film transistors (TFTs). The transmittance of the optimized MIAZ electrode is 92.46% and the sheet resistance is 7.77 Omega/square. The top gate InGaZnO TFT with this gate electrode shows the mobility of 11.57 cm(2)/(V . s) and positive V-th of 0.210 V compared with that with single ITO gate electrode of which V-th is -0.086 V.