A WLAN CMOS power amplifier with insensitive bias circuits

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A CMOS power amplifier (PA) for IEEE 802.11b/g/n/ac applications is presented, which is implemented with a 0.13-mu m standard RF CMOS process. Integrated bias circuits for the common source (CS) and common gate (CG) power transistors are proposed, which reduce the performance sensitivities of the PA according to the variations of the bias voltage and output power. Measurements show that the proposed power amplifier achieves 17.2 dBm output power with 8.1% PAE at -34 dB EVM with MCS8, 256QAM, 40 MHz, 802.11ac signal source. (c) 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2331-2334, 201
Publisher
WILEY-BLACKWELL
Issue Date
2016-10
Language
English
Article Type
Article
Citation

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.58, no.10, pp.2331 - 2334

ISSN
0895-2477
DOI
10.1002/mop.30050
URI
http://hdl.handle.net/10203/213065
Appears in Collection
EE-Journal Papers(저널논문)
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