Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High-K Dielectrics

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dc.contributor.authorAhn, Hyun Junko
dc.contributor.authorMoon, Jungminko
dc.contributor.authorKoh, Sunghoko
dc.contributor.authorSeo, Yujinko
dc.contributor.authorKim, Choong-Kiko
dc.contributor.authorRho, Il Cheolko
dc.contributor.authorKim, Choon Hwanko
dc.contributor.authorHwang, Wan Sikko
dc.contributor.authorCho, Byung-Jinko
dc.date.accessioned2016-07-25T09:36:02Z-
dc.date.available2016-07-25T09:36:02Z-
dc.date.created2016-06-13-
dc.date.created2016-06-13-
dc.date.created2016-06-13-
dc.date.issued2016-07-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.7, pp.2858 - 2863-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/212108-
dc.description.abstractErbium carbide (ErC2) prepared by atomic layer deposition (ALD) is successfully demonstrated for the first time as a novel work function (WF) metal for nMOSFET applications. The prepared ErC2 shows a very low effective WF (eWF), as low as 3.9 eV on HfO2, yet with excellent thermal stability. In addition, it did not show significant Fermi-level pinning on high-k dielectrics even after high-temperature annealing. The low eWF property of ErC2 originates from the properties of the lanthanide family, while its good thermal stability is attributed to the properties of metal carbides. ALD-ErC2 has superior conformality over other deposition methods, and thus is a strong candidate for 3-D structure devices.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleVery Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High-K Dielectrics-
dc.typeArticle-
dc.identifier.wosid000378607100034-
dc.identifier.scopusid2-s2.0-84971455200-
dc.type.rimsART-
dc.citation.volume63-
dc.citation.issue7-
dc.citation.beginningpage2858-
dc.citation.endingpage2863-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2016.2570221-
dc.contributor.localauthorCho, Byung-Jin-
dc.contributor.nonIdAuthorKoh, Sungho-
dc.contributor.nonIdAuthorRho, Il Cheol-
dc.contributor.nonIdAuthorKim, Choon Hwan-
dc.contributor.nonIdAuthorHwang, Wan Sik-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorAtomic-layer-deposition (ALD)-
dc.subject.keywordAuthorFermi-level pinning-
dc.subject.keywordAuthorhigh-k metal gate (HKMG)-
dc.subject.keywordAuthormetal gate electrode-
dc.subject.keywordAuthorrare earth metal-
dc.subject.keywordAuthorreplacement gate process-
dc.subject.keywordAuthorwork function (WF)-
dc.subject.keywordPlusATOMIC LAYER DEPOSITION-
dc.subject.keywordPlusVOLTAGE ROLL-OFF-
dc.subject.keywordPlusHIGH-KAPPA-
dc.subject.keywordPlusGATE STACKS-
dc.subject.keywordPlusTECHNOLOGY-
dc.subject.keywordPlusBEHAVIOR-
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