DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Eungtaek | ko |
dc.contributor.author | Kim, Choong-Ki | ko |
dc.contributor.author | Lee, Myung Keun | ko |
dc.contributor.author | Bang, Tewook | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Choi, Kyung Cheol | ko |
dc.date.accessioned | 2016-07-07T05:37:36Z | - |
dc.date.available | 2016-07-07T05:37:36Z | - |
dc.date.created | 2016-06-13 | - |
dc.date.created | 2016-06-13 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.108, no.18 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/209841 | - |
dc.description.abstract | We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al2O3, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (Delta V-th) was 0V even after a PBS time (t(stress)) of 3000 s under a gate voltage (V-G) condition of 5V (with an electrical field of 1.25MV/cm). On the other hand, when the first GI was deposited by PEALD, the Delta V-th value of a-IGZO TFTs was 0.82V after undergoing an identical amount of PBS. In order to interpret the disparate Delta V-th values resulting from PBS quantitatively, the average oxide charge trap density (N-T) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher N-T resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of N-T near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface. Published by AIP Publishing. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | DEVICES | - |
dc.title | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000377023300021 | - |
dc.identifier.scopusid | 2-s2.0-84973661407 | - |
dc.type.rims | ART | - |
dc.citation.volume | 108 | - |
dc.citation.issue | 18 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4948765 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.localauthor | Choi, Kyung Cheol | - |
dc.contributor.nonIdAuthor | Lee, Myung Keun | - |
dc.contributor.nonIdAuthor | Bang, Tewook | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | DEVICES | - |
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