Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

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Crack-free AlGaN template has been successfully grown over entire 2-in. wafer by using 2-step selective area growth (SAG). The GaN truncated structure was obtained by vertical growth mode with low growth temperature. AlGaN of second step was grown under lateral growth mode. Low pressure enhanced the relative ratio of lateral to vertical growth rate as well as absolute overall growth rate. High Will ratio was favorable for lateral growth mode. Crack-free planar AlGaN was obtained under low pressure of 30 Torr and high Will ratio of 4400. The AlGaN was crack-free over entire 2-in. wafer and had quite uniform Al-mole fraction. The dislocation density of the AlGaN with 20% Al-composition was as low as similar to 7.6 x 10(8) / cm(2), measured by cathodoluminescence. GaN/AlGaN multi-quantum well (MQW) with cladding and waveguide layers were grown on the crack-free AlGaN template with low dislocation density. It was confirmed that the MQW on the AlGaN template emitted the stimulated emission at 355.5 nm through optical pumping experiment. The AlGaN obtained by 2-step SAG would provide high crystal quality for highly-efficient optoelectronic devices as well as the ultraviolet laser diode. (C) 2016 Elsevier B.V. All rights reserved
Publisher
ELSEVIER SCIENCE BV
Issue Date
2016-07
Language
English
Article Type
Article
Keywords

LIGHT-EMITTING-DIODES; SAPPHIRE; HETEROSTRUCTURES; SEMICONDUCTORS; SUPERLATTICES; OVERGROWTH; PRESSURE; NITRIDES; DEVICES; LASERS

Citation

JOURNAL OF CRYSTAL GROWTH, v.445, pp.78 - 83

ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2016.04.021
URI
http://hdl.handle.net/10203/209822
Appears in Collection
PH-Journal Papers(저널논문)
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