Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors

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The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal oxygen metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal oxygen metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 degrees C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 X 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) s(-1), and a bias stability of Delta V-TH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs
Publisher
AMER CHEMICAL SOC
Issue Date
2016-04
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; DENSITY-OF-STATES; GA-ZN-O; ZINC-OXIDE; SOL-GEL; LOW-VOLTAGE; DEGREES-C; PERFORMANCE; DIELECTRICS; ELECTRONICS

Citation

ACS APPLIED MATERIALS &amp; INTERFACES, v.8, no.16, pp.10403 - 10412

ISSN
1944-8244
DOI
10.1021/acsami.5b12819
URI
http://hdl.handle.net/10203/209230
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