A Monolithically Integrated Pressure/Oxygen/Temperature Sensing SoC for Multimodality Intracranial Neuromonitoring

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A fully integrated SoC for multimodality intracranial neuromonitoring is presented in this paper. Three sensors including a capacitive MEMS pressure sensor, an electrochemical oxygen sensor and a solid-state temperature sensor are integrated together in a single chip with their respective interface circuits. Chopper stabilization and dynamic element matching techniques are applied in sensor interface circuits to reduce circuit noise and offset. On-chip calibration is implemented for each sensor to compensate process variations. Measured sensitivity of the pressure, oxygen, and temperature sensors are 18.6 aF/mmHg, 194 pA/mmHg, and 2 mV/degrees C, respectively. Implemented in 0.18 mu m CMOS, the SoC occupies an area of 1.4 mm x 4 mm and consumes 166 W DC power. A prototype catheter for intracranial pressure (ICP) monitoring has been implemented and the performance has been verified with ex vivo experiment.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2014-11
Language
English
Article Type
Article
Keywords

SMART TEMPERATURE SENSOR; 3-SIGMA INACCURACY; DISSOLVED-OXYGEN; PRESSURE SENSOR; CMOS; COMPENSATION; MICROSYSTEM; WIRELESS; 10-BIT; INJURY

Citation

IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.49, no.11, pp.2449 - 2461

ISSN
0018-9200
DOI
10.1109/JSSC.2014.2345754
URI
http://hdl.handle.net/10203/208359
Appears in Collection
EE-Journal Papers(저널논문)
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