Microscopic control of Si-29 nuclear spins near phosphorus donors in silicon (AH) Jarvinen, J-제1 및 교신저자

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dc.contributor.authorJarvinen, J.ko
dc.contributor.authorZvezdov, D.ko
dc.contributor.authorAhokas, J.ko
dc.contributor.authorSheludyakov, S.ko
dc.contributor.authorVainio, O.ko
dc.contributor.authorLehtonen, L.ko
dc.contributor.authorVasiliev, S.ko
dc.contributor.authorFujii, Y.ko
dc.contributor.authorMitsudo, S.ko
dc.contributor.authorMizusaki, T.ko
dc.contributor.authorGwak, M.ko
dc.contributor.authorLee, SangGapko
dc.contributor.authorLee, Soonchilko
dc.contributor.authorVlasenko, L.ko
dc.date.accessioned2016-05-12T03:00:45Z-
dc.date.available2016-05-12T03:00:45Z-
dc.date.created2015-10-19-
dc.date.created2015-10-19-
dc.date.created2015-10-19-
dc.date.created2015-10-19-
dc.date.issued2015-09-
dc.identifier.citationPHYSICAL REVIEW B, v.92, no.12-
dc.identifier.issn2469-9950-
dc.identifier.urihttp://hdl.handle.net/10203/207199-
dc.description.abstractWe demonstrate an efficient control of Si-29 nuclear spins for specific lattice sites near P-31 donors in silicon at temperatures below 1 K and in a high magnetic field of 4.6 T. Excitation of the forbidden electron-nuclear transitions leads to a pattern of well-resolved holes and peaks in the electron spin resonance (ESR) lines of P-31. The pattern originates from dynamic polarization (DNP) of the Si-29 nuclear spins near the donors via the solid effect. DNP of Si-29 is demonstrated also with the Overhauser effect where the allowed ESR transitions are excited. In this case mostly the remote Si-29 nuclei having weak interaction with the donors are polarized, which results in a single hole and a sharp peak pair in the ESR spectrum. Our work shows that the solid effect can be used for initialization of Si-29 nuclear spin qubits near the donors.-
dc.languageEnglish-
dc.publisherAMER PHYSICAL SOC-
dc.titleMicroscopic control of Si-29 nuclear spins near phosphorus donors in silicon-
dc.title.alternative(AH) Jarvinen, J-제1 및 교신저자-
dc.typeArticle-
dc.identifier.wosid000361802300001-
dc.identifier.scopusid2-s2.0-84942354252-
dc.type.rimsART-
dc.citation.volume92-
dc.citation.issue12-
dc.citation.publicationnamePHYSICAL REVIEW B-
dc.identifier.doi10.1103/PhysRevB.92.121202-
dc.contributor.localauthorLee, Soonchil-
dc.contributor.nonIdAuthorJarvinen, J.-
dc.contributor.nonIdAuthorZvezdov, D.-
dc.contributor.nonIdAuthorAhokas, J.-
dc.contributor.nonIdAuthorSheludyakov, S.-
dc.contributor.nonIdAuthorVainio, O.-
dc.contributor.nonIdAuthorLehtonen, L.-
dc.contributor.nonIdAuthorVasiliev, S.-
dc.contributor.nonIdAuthorFujii, Y.-
dc.contributor.nonIdAuthorMitsudo, S.-
dc.contributor.nonIdAuthorMizusaki, T.-
dc.contributor.nonIdAuthorGwak, M.-
dc.contributor.nonIdAuthorLee, SangGap-
dc.contributor.nonIdAuthorVlasenko, L.-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusHYPERFINE INTERACTIONS-
dc.subject.keywordPlusRESONANCE EXPERIMENTS-
dc.subject.keywordPlusQUANTUM COMPUTER-
dc.subject.keywordPlusDOPED SILICON-
dc.subject.keywordPlusELECTRONS-
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