Microscopic control of Si-29 nuclear spins near phosphorus donors in silicon (AH) Jarvinen, J-제1 및 교신저자

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We demonstrate an efficient control of Si-29 nuclear spins for specific lattice sites near P-31 donors in silicon at temperatures below 1 K and in a high magnetic field of 4.6 T. Excitation of the forbidden electron-nuclear transitions leads to a pattern of well-resolved holes and peaks in the electron spin resonance (ESR) lines of P-31. The pattern originates from dynamic polarization (DNP) of the Si-29 nuclear spins near the donors via the solid effect. DNP of Si-29 is demonstrated also with the Overhauser effect where the allowed ESR transitions are excited. In this case mostly the remote Si-29 nuclei having weak interaction with the donors are polarized, which results in a single hole and a sharp peak pair in the ESR spectrum. Our work shows that the solid effect can be used for initialization of Si-29 nuclear spin qubits near the donors.
Publisher
AMER PHYSICAL SOC
Issue Date
2015-09
Language
English
Article Type
Article
Citation

PHYSICAL REVIEW B, v.92, no.12

ISSN
2469-9950
DOI
10.1103/PhysRevB.92.121202
URI
http://hdl.handle.net/10203/207199
Appears in Collection
PH-Journal Papers(저널논문)
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