Micron and submicron patterning of polydimethylsiloxane resists on electronic materials by decal transfer lithography and reactive ion-beam etching: Application to the fabrication of high-mobility, thin-film transistors

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dc.contributor.authorAhn, Heejoon-
dc.contributor.authorLee, Keon Jae-
dc.contributor.authorChilds, William R.-
dc.contributor.authorRogers, John A.-
dc.contributor.authorNuzzo, Ralph G.-
dc.contributor.authorShim, Anne-
dc.date.accessioned2010-11-25T07:05:41Z-
dc.date.available2010-11-25T07:05:41Z-
dc.date.issued2006-
dc.identifier.citationJournal of Applied Physics, Vol.100en
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/20409-
dc.description.abstractWe describe a technique for fabricating micron and submicron-sized polydimethylsiloxane PDMS patterns on electronic material substrates using decal transfer lithography DTL in conjunction with reactive ion-beam etching RIE. We validate the use of this unconventional polymeric system as a suitable resist material for fabricating Si-based microelectronic devices. In this process, an O2/CF4 gas mixture was used to etch a supporting PDMS thin film that resides atop a closed-form decal polymer to reveal conventional resist structures. These structures provide an effective latent image that, in turn, provides for an extension of soft lithography as a form of multilayer lithography—one yielding submicron structures similar to those obtained from the conventional photochemical methods used to prepare such resists. This combined DTL/RIE patterning procedure was found to be compatible with commercially available planarization layers and provides a direct means for preparing high aspect ratio resist features. We illustrate the applicability of soft lithography as a means for fabricating electronic devices by using it to prepare model silicon-based thin-film transistors exploiting silicon-on-insulator wafer technology.en
dc.description.sponsorshipThis work was supported by the Dow Corning Corporation and use of central facilities of the Frederick Seitz Materials Research Laboratory at the University of Illinois, which is partially supported by the DOE DEFG02-91-ER-45439.en
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.titleMicron and submicron patterning of polydimethylsiloxane resists on electronic materials by decal transfer lithography and reactive ion-beam etching: Application to the fabrication of high-mobility, thin-film transistorsen
dc.typeArticleen
dc.identifier.doi10.1063/1.2356784-

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