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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Comparison of the characteristics of tunneling oxide and tunneling ON for P-channel Nano-crystal Memory Hyung-Cheol Shin, The 6th International Conference on VLSI and Cad(ICVC'99), pp.233 - 236, 1999 | |
| Silicon MOS Memory with self-aligned Quantum Dot on Narow Channel Hyung-Cheol Shin, ICVC99, pp.187 - 189, 1999 | |
| Fabrication and Characterization of a Quantum Dot Flash Memory Hyung-Cheol Shin, 99 International Workshop on Advanced LSI's and Devices, pp.12 - 15, 1999 | |
| PMOS-based Si Nano-crystal Memory Hyung-Cheol Shin, Silicon nanoelectronics workshop, pp.10 - 11, 1999 | |
| Characteristics of P-channel Si Nano-crystal Memory with Tunneling Oxide Hyung-Cheol Shin, 99 ISDRS, pp.73 - 75, 1999 | |
| Characteristics of P-channel Si Nano-crystal Memory Hyung-Cheol Shin, IEEE Region 10 Ionference, TENCON, pp.1140 - 1142, 1999 | |
| Lateral Silicon Field Emission Devices using Electron Beam Lithography Hyung-Cheol Shin, Micoroprocesses and Nanotechnology'99, pp.134 - 135, 1999 |
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