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Results 1-10 of 30 (Search time: 0.005 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
New staggered poly-Si TFT with a self-aligned offset structure

Chul-Hi Hanresearcher, IDRC, pp.29 - 30, 1998

High-Performance Electroplated Solenoid-Type Integrated Inductor (SI2) for RF Applications Using Simple 3D Surface Micromachining Technology

Chul-Hi Hanresearcher, IEDM, pp.6 - 9, 1998

Two Layer Gate Insulator with ECR Thermal Oxide/LPCVD Oxide for Poly-Si TFT

Chul-Hi Hanresearcher, Japan Society of Applied Physics and Related Societies, pp.633 -, 1993

Characteristics of Poly-Si TFT's with various active layer thicknesses formed using ECR oxidation and wet etching

Kim, Choong Ki; Chul-Hi Hanresearcher, International workshop on Active Matrix Liquid Crystal Displays, 1994

Low Temperature Polysilicon TFT's with ECR plasma thermal oxide using Si2H6 source gas for active polysilicon film

Kim, Choong Ki; Chul-Hi Hanresearcher, 2nd International Semiconductor Device Research Symposium, 1994

A Low-Power Poly-Si TFT-LCD with Integrated 8-bit Digital Data DRivers

Chul-Hi Hanresearcher, IDRC, 1998

Suppression of Leakage Current in Polysilicon NMOS Thin Film Transistors Using NH3 Annealing

Kim, Choong Ki; Chul-Hi Hanresearcher, International Conference on Solid State Device and Materials, 1994

Gate-Induced Drain Leakage in MOSFETs

Chul-Hi Hanresearcher, International Symposium on Physics of Semiconductors and Applications, 1990

Application of electron cyclotron resonance plasma thermal oxidation to bottom gate polysilicon thin film transistors

Kim, Choong Ki; Chul-Hi Hanresearcher, International Conference on Solid State Devices and Materials, pp.653 - 655, 1995

High-Performace EEPROMS Using N-and P-channel Poly-Si Thin Film Transistors with ECR N2O-Plasma Oxide, The International Conference on Solid state Devices and Materials

Chul-Hi Hanresearcher, SSDM, 1998



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