Showing results 56 to 67 of 67
Recessed Channel(RC) SOI NMOSFET's with Self-Aligned Polysilicon Gate Formed on the RC Region Hyung-Cheol Shin, Proc. IEEE International SOI Conference, pp.122 - 123, 1996 |
RF characteristics of 30 nm MOSFETs with non-overlapped source-drain to gate Hyung-Cheol Shin, Silicon Nanoelectronics Workshop 2002, 2002 |
Silicon MOS Memory with self-aligned Quantum Dot on Narow Channel Hyung-Cheol Shin, ICVC99, pp.187 - 189, 1999 |
Silicon nano-crystal memory with tunneling nitride Hyung-Cheol Shin, International Conference on Solid State Devices and Materials, pp.170 - 171, 1998 |
Sub 4-nm Polyoxide Using ECR(Electron Cyclotron Resonance) N2O Plasma Oxidation Hyung-Cheol Shin, 2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, pp.25 - 30, 2000 |
TFSOI Complementary BiCMOS Technology for Low Power RF Mixed-Mode Applications Hyung-Cheol Shin, IEEE Custom Integrated Circuits Conference, pp.35 - 38, 1996 |
Thickness and Other Defects on Oxide and Interface Reliability due to Plasma Processing Hyung-Cheol Shin, Proc. IEEE International Reliability Phys. Symp., pp.272 - 279, 1993 |
Thin Oxide Damage by Plasma Etching and Ashing Processes Hyung-Cheol Shin, Proc. IEEE International Reliability Phys. Symp., pp.37 - 41, 1992 |
Transient Behaviors in Partially Depleted Thin Film SOI Devices Hyung-Cheol Shin, Proc. IEEE International SOI Conference, pp.4 - 6, 1995 |
Two Band Tunneling Currents in Dual-Gate CMOSFET with Ultrathin Gate Oxide Hyung-Cheol Shin, ICSMM 2000, pp.108 - 109, 2000 |
Ultra thin oxide grown on polysilicon by ECR(Electron Cyclotron Resonance) N2O Plasma Hyung-Cheol Shin, 5th International Symposium on Plasma Process-Induced Damage 2000, no.2000, pp.133 - 136, 2000 |
열 영상을 위한 Hg0.7Cd0.3Te 128X1 적외선 감지소자 어레이 및 실리콘 Readout 회로 제작 신형철; 이성훈; 윤난영; 배수호; 김충기, 국방소재 학술대회, pp.47 - 60, 1996 |
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