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Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

Kim Ilgweon; Han Sangyeon; Kim Hyungsik; Lee Jongho; Choi Bumho; Hwang Sungwoo; Ahn Doyeol; et al, Proceedings of the 1998 IEEE International Electron Devices Meeting, pp.111 - 114, IEEE, 1998-12-06

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