RIMS Journal Papers

Recent Items

Collection's Items (Sorted by Submit Date in Descending order): 1541 to 1560 of 4798

1541
Influence of interface traps inside the conduction band on the capacitance-voltage characteristics of InGaAs metal-oxide-semiconductor capacitors

Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Iida, Ryo; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS EXPRESS, v.9, no.11, 2016-11

1542
III-V/Ge MOS device technologies for low power integrated systems

Takagi, S.; Noguchi, M.; Kim, M.; Kim, S. -H.; Chang, C. -Y.; Yokoyama, M.; Nishi, K.; et al, SOLID-STATE ELECTRONICS, v.125, pp.82 - 102, 2016-11

1543
Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density

Kim, Seong Kwang; Geum, Dae-Myeong; Shim, Jae-Phil; Kim, Chang Zoo; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun; et al, APPLIED PHYSICS LETTERS, v.110, no.4, 2017-01

1544
Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display

Kang, Chang-Mo; Kong, Duk-Jo; Shim, Jae-Phil; Kim, Sanghyeon; Choi, Sang-Bae; Lee, Jun-Yeob; Min, Jung-Hong; et al, OPTICS EXPRESS, v.25, no.3, pp.2489 - 2495, 2017-02

1545
Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors

Roh, Ii Pyo; Kim, Sang Hyeon; Song, Yun Heub; Song, Jin Dong, CURRENT APPLIED PHYSICS, v.17, no.3, pp.417 - 421, 2017-03

1546
Fabrication of high-quality GaAs-based photodetector arrays on Si

Kim, SangHyeon; Geum, Dae-Myeong; Park, Min-Su; Kim, Ho-Sung; Song, Jin Dong; Choi, Won Jun, APPLIED PHYSICS LETTERS, v.110, no.15, 2017-04

1547
Heterogeneously integrated high-performance GaAs single-junction solar cells on copper

Geum, Dae-Myeong; Park, Min-Su; Kim, SangHyeon; Choi, Won Jun; Kim, Chang Zoo; Yoon, Euijoon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.70, no.7, pp.693 - 698, 2017-04

1548
Mechanically Robust, Stretchable Solar Absorbers with Submicron-Thick Multilayer Sheets for Wearable and Energy Applications

Lee, Hye Jin; Jung, Dae-Han; Kil, Tae-Hyeon; Kim, Sang Hyeon; Lee, Ki-Suk; Baek, Seung-Hyub; Choi, Won Jun; et al, ACS APPLIED MATERIALS & INTERFACES, v.9, no.21, pp.18061 - 18068, 2017-05

1549
The third dimension: The logical step for III-Vs

Kim, Sanghyeon; Kim, Seongkwang; Kim, Hyung-Jun, COMPOUND SEMICONDUCTOR, v.23, no.4, pp.42 - 46, 2017-06

1550
InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off

Kim, Hosung; Ahn, Seung-Yeop; Kim, Sanghyeon; Ryu, Geunhwan; Kyhm, Ji Hoon; Lee, Kyung Woon; Park, Jung Ho; et al, OPTICS EXPRESS, v.25, no.15, pp.17562 - 17570, 2017-07

1551
A highly-efficient, concentrating-photovoltaic/thermoelectric hybrid generator

Kil, Tae-Hyeon; Kim, Sanghyeon; Jeong, Dae-Han; Geum, Dae-Myeong; Lee, Sooseok; Jung, Sung-Jin; Kim, Sangtae; et al, NANO ENERGY, v.37, pp.242 - 247, 2017-07

1552
Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques

Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.9, pp.3594 - 3601, 2017-09

1553
Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission

Kang, Chang-Mo; Kang, Seok-Jin; Mun, Seung-Hyun; Choi, Soo-Young; Min, Jung-Hong; Kim, Sanghyeon; Shim, Jae-Phil; et al, SCIENTIFIC REPORTS, v.7, 2017-09

1554
Simulation Study on the Design of Sub-kT/q Non-hysteretic Negative Capacitance FET Using Capacitance Matching

Bidenko, Pavlo; Lee, Subin; Han, Jae-Hoon; Song, Jin Dong; Kim, Sang-Hyeon, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.6, no.1, pp.910 - 921, 2018

1555
Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III-V and Ge Materials

Kim, Sang-Hyeon; Kim, Seong-Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Ju, Gunwu; Kim, Han-Sung; Lim, Hee-Jeong; et al, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.6, no.1, pp.579 - 587, 2018

1556
Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si

Shim, Jae-Phil; Kim, Seong Kwang; Kim, Hansung; Ju, Gunwu; Lim, Heejeong; Kim, SangHyeon; Kim, Hyung-jun, APL MATERIALS, v.6, no.1, 2018-01

1557
Verification of Ge-on-insulator structure for a mid-infrared photonics platform

Kim, SangHyeon; Han, Jae-Hoon; Shim, Jae-Phil; Kim, Hyung-Jun; Choi, Won Jun, OPTICAL MATERIALS EXPRESS, v.8, no.2, pp.440 - 451, 2018-02

1558
Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates

Ju, Gunwu; Kim, Hansung; Shim, Jae-Phil; Kim, Seong Kwang; Lee, Byeong-Hyeon; Won, Sung Ok; Kim, Sanghyeon; et al, THIN SOLID FILMS, v.649, pp.38 - 42, 2018-03

1559
Room temperature operation of mid-infrared InAs0.81Sb0.19 based photovoltaic detectors with an In0.2Al0.8Sb barrier layer grown on GaAs substrates

Geum, Dae-Myeong; Kim, SangHyeon; Kang, SooSeok; Kim, Hosung; Park, Hwanyeol; Rho, Il Pyo; Ahn, Seung Yeop; et al, OPTICS EXPRESS, v.26, no.5, pp.6249 - 6259, 2018-03

1560
Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V Templates

Shim, Jae-Phil; Kim, Han-Sung; Ju, Gunwu; Lim, Hyeong-Rak; Kim, Seong Kwang; Han, Jae-Hoon; Kim, Hyung-Jun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.3, pp.1253 - 1257, 2018-03

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