Characteristics of organic light emitting diodes with Al-doped ZnO anode deposited by atomic layer deposition

Abstract

Transparent conductive, Al-doped ZnO films (ZnO:Al) have been deposited by means of an atomic layer deposition method with the surface chemical compositions of ZnO (film A) and Al2O3 (film B). The sheet resistance, surface work function, and structure characteristics of ZnO:Al films have been investigated. Organic light emitting diodes (OLEDs) were fabricated oil glass substrates using two different ZnO:Al anodes. The devices fabricated with them exhibited higher current and luminance with higher external quantum efficiencies below approximately 5000 cd/m(2), than those fabricated with a conventional tin-doped indium oxide (ITO) anode. The external quantum efficiencies of the devices with film A, film B, and ITO were 1.86, 1.97, and 1.74%, respectively.