See-Through Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel

Abstract

We proposed and fabricated a transparent nonvolatile memory thin-film transistor (T-MTFT). The T-MTFT was composed of a ferroelectric copolymer gate insulator of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and an oxide semiconducting active channel of amorphous Al-Zn-Sn-O (AZTO). The fabrication procedures were so designed as to have both good transparency and high performances even at a low process temperature below 200 degrees C. Consequently, the memory window with a gate voltage sweep of -10 to 10 V, the field-effect mobility in the linear region, the subthreshold swing, the on/off ratio, and the gate leakage current were obtained to be 8.6 V, 32.2 cm(2) V-1.s(-1), 0.45 V/dec, 10(8), and 10(-12) A, respectively. Although the photo-response and the retention behaviors should be more improved and optimized, all these obtained characteristics were very promising for the future transparent electronics.