Insulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors

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Ultrathin (approximately three quintuple layer) field-effect transistors (FETs) of topological insulator Bi(2)Se(3) are prepared by mechanical exfoliation on 300 nm SiO(2)/Si susbtrates. Temperature- and gate-voltage-dependent conductance measurements show that ultrathin Bi(2)Se(3) FETs are n-type and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.
Publisher
AMER CHEMICAL SOC
Issue Date
2011-05
Language
English
Article Type
Article
Keywords

TOPOLOGICAL-INSULATOR; SURFACE-STATES; TRANSPORT; BI2TE3

Citation

NANO LETTERS, v.11, no.5, pp.1925 - 1927

ISSN
1530-6984
URI
http://hdl.handle.net/10203/201401
Appears in Collection
PH-Journal Papers(저널논문)
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