Topological Insulator Quantum Dot with Tunable Barriers

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Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2-4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy > 5 meV and additional features implying excited states.
Publisher
AMER CHEMICAL SOC
Issue Date
2012-01
Language
English
Article Type
Article
Keywords

SURFACE-STATE; TRANSPORT; GRAPHENE

Citation

NANO LETTERS, v.12, no.1, pp.469 - 472

ISSN
1530-6984
DOI
10.1021/nl203851g
URI
http://hdl.handle.net/10203/201390
Appears in Collection
PH-Journal Papers(저널논문)
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