Browse "School of Electrical Engineering(전기및전자공학부)" byTitle

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Atom 형태에 따른 개선된 정합 추적 알고리즘에 관한 연구

유기원; 노용만researcher, 신호처리학회, pp.899 - 902, 1998-06-01

ATOMi: An algorithm for circuit partitioning into multiple FPGAs using time-multiplexed, off-chip, multicasting interconnection architecture

Kwon, YS; Kyung, Chong-Minresearcher, IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, v.13, no.7, pp.861 - 864, 2005-07

Atomic force microscope probe tips using heavily boron-doped silicon cantilevers realized in a (110) bulk silicon wafer

Cho, Il-Joo; Park, Eun-Chul; Hong, Songcheolresearcher; Yoon, Euisik, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.12B, pp.7103 - 7107, 2000-12

Atomic layer deposited high-kappa films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications

Zhu, CX; Cho, Byung Jinresearcher; Li, MF, CHEMICAL VAPOR DEPOSITION, v.12, no.2-3, pp.165 - 171, 2006-03

Atomic layer deposited metal gate stack for logic and memory devices = 로직 및 메모리 소자를 위한 원자층 증착법을 이용한 금속 게이트 스택link

Moon, Jungmin; Cho, Byung Jin; et al, 한국과학기술원, 2018

Atomic layer deposition of nickel and nickel germanide for next generation 3D devices = 차세대 3D 반도체 소자 적용을 위한 니켈의 원자층 증착 방법 공정 개발 및 니켈-저마나이드 형성link

Ahn, Hyun Jun; Cho, Byung Jin; et al, 한국과학기술원, 2020

Atomic Layer Deposition 방법을 이용한 금속 게이트 전극 일함수 조정에 대한 연구 = Study on tuning effective work function of metal gate electrode using atomic layer depositionlink

임성묵; Lim, Sung-Mook; et al, 한국과학기술원, 2013

Atomic rearrangement of amorphous silicon by Sub-1 keV electron irradiation in plasma = 플라즈마 내 1 keV 미만의 전자 조사에 의한 비정질 실리콘의 원자 재결합link

Kim, Da-Jin; Choi, Yang-Kyu; et al, 한국과학기술원, 2020

Atomic scale etching of hexagonal boron nitride for two-dimensional integrated circuits

Park, Hamin; Lee, Khang June; LEE, JAEEUN; Choi, Sung-Yoolresearcher, NANO KOREA 2017, NANO KOREA 2017, 2017-07-13

Atomic Vacancy Control and Elemental Substitution in a Monolayer Molybdenum Disulfide for High Performance Optoelectronic Device Arrays

Chee, Sang-Soo; Lee, Won-June; Jo, Yong-Ryun; Cho, Min Kyung; Chun, DongWon; Baik, Hionsuck; Kim, Bong-Joong; et al, ADVANCED FUNCTIONAL MATERIALS, v.30, no.11, 2020-03

Atomic-Scale Degradation Mechanisms of Hybrid Halide Perovskites: An Ab Inition Study

Khan, Muhammad Ejaz; 김용훈researcher, 한국물리학회 2019년 봄학술대회, 한국물리학회, 2019-04-26

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials

Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yoolresearcher, NANOSCALE, v.10, no.32, pp.15205 - 15212, 2018-08

Atomically Resolved Elucidation of the Electrochemical Covalent Molecular Grafting Mechanism of Single Layer Graphene

Gearba, Raluca I.; Kim, Minjung; Mueller, Kory M.; Veneman, Peter A.; Lee, Kayoungresearcher; Holliday, Bradley J.; Chan, Calvin K.; et al, ADVANCED MATERIALS INTERFACES, v.3, no.16, 2016-08

Atomically Thin Heterostructure with Gap-Mode Plasmon for Overcoming Trade-off between Photoresponsivity and Response Time

Lee, Khang June; Park, Cheolmin; Jin, Hyeok Jun; Shin, Gwang Hyuk; Choi, Sung-Yoolresearcher, Nano Research, v.14, no.5, pp.1305 - 1310, 2021-05

Atomically thin Schottky junction with a gap-mode plasmon for an ultrahigh photoresponsivity in MoS2 based photodetector

진혁준; 이강준; 박철민; 신광혁; 홍웅기; 오동식; 최성율researcher, 제 7회 한국그래핀/2차원소재 심포지엄, 한국그래핀학회, 2020-09-17

Atomically thin Schottky junction with a gap-mode plasmon for an ultrahigh photoresponsivity in MoS2 based photodetector

Jin, Hyeok Jun; Lee, Khang June; Park, Cheol Min; Shin, Gwang Hyuk; Hong Woonggi; Oh, Dongsik; Choi, Sung-Yoolresearcher, 6th International Workshop on 2D Materials, National Research Foundation of Korea, 2020-09-24

Atomically thin Schottky junction with a gap-mode plasmon for enhanced photoresponsivity in MoS2-based photodetectors

Jin, Hyeok Jun; Lee, Khang June; Park, Cheol Min; Shin, Gwang Hyuk; Hong, Woonggi; Oh, Dongsik; Choi, Sung-Yoolresearcher, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.54, no.14, pp.145301, 2021-04

Atomistic Asymmetric Effect on the Performance of HfO2-based Ferroelectric Tunnel Junctions

Seo, Junbeom; Shin, Mincheolresearcher, PHYSICAL REVIEW APPLIED, v.14, no.5, 2020-11

Atomistic Mechanism of MoS2 Oxidation Induced by Reactive Superoxide and Ozone Treatment: A First-principles Study

Noh, Min Jong; Khan, Muhammad Ejaz; Kim, Yong-Hoonresearcher, APS March Meeting 2021, American Physical Society, 2021-03-18

Atomistic mechanisms of seeding promoter-controlled growth of molybdenum disulphide

Ko, Hayoung; Kim, Han Seul; Ramzan, Muhammad Sufyan; Byeon, Seongjae; Choi, Soo Ho; Kim, Ki Kang; Kim, Yong-Hoonresearcher; et al, 2D MATERIALS, v.7, no.1, pp.015013, 2020-01



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