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HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer Maeng, W. J.; Gu, Gil Ho; Park, C. G.; Lee, Kayoung; Lee, Taeyoon; Kim, Hyungjun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.8, pp.G109 - G113, 2009 |
Thermal Stability and Memory Characteristics of HfON Trapping Layer for Flash Memory Device Applications Jeon, Sanghun, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.11, pp.H412 - H415, 2009 |
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