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HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer

Maeng, W. J.; Gu, Gil Ho; Park, C. G.; Lee, Kayoung; Lee, Taeyoon; Kim, Hyungjun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.8, pp.G109 - G113, 2009

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