Browse "School of Electrical Engineering(전기및전자공학부)" by Subject 1T-DRAM

Showing results 6 to 17 of 17

6
Carrier Lifetime Engineering for Floating-Body Cell Memory

Kim, Sung-Ho; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.2, pp.367 - 373, 2012-02

7
Flexible unified memory for multi-functioning nonvolatile memory and ultrafast 1T-DRAM = 비휘발성 메모리와 초고속 1T-DRAM의 복합기능을 수행하는 플렉시블 퓨전메모리link

Choi, Ji-Min; 최지민; et al, 한국과학기술원, 2015

8
Floating bias scheme for long-term endurable 1T-DRAM = 캐패시터 없는 디램의 작동 내구성 향상을 위한 바이어스 방법에 대한 연구link

Kim, Dong-Oh; 김동오; et al, 한국과학기술원, 2014

9
Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM)

Han, Jin-Woo; Ryu, Seong-Wan; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.30, no.2, pp.189 - 191, 2009-02

10
Gate-to-Source/Drain Non-Overlap Device for Soft-Program Immune Unified-RAM (URAM)

Han, Jin-Woo; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Dong-Hyun; Moon, Dong-Il; Choi, Yang-Kyu, IEEE Electron Device Letters, Vol. 30, No. 5, pp.544-546, 2009-05

11
Gate-to-Source/Drain Nonoverlap Device for Soft-Program Immune Unified RAM (URAM)

Han, Jin-Woo; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Dong-Hyun; Moon, Dong-Il; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.30, no.5, pp.544 - 546, 2009-05

12
Improvement of the Sensing Window on a Capacitorless 1T-DRAM of a FinFET-Based Unified RAM

Choi, Sung-Jin; Han, Jin-Woo; Kim, Chung-Jin; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.12, pp.3228 - 3231, 2009-12

13
Investigation of Isolation-Dielectric Effects of PDSOI FinFET on Capacitorless 1T-DRAM

Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.12, pp.3232 - 3235, 2009-12

14
Resistive-Memory Embedded Unified RAM (R-URAM)

Kim, Sung-Ho; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2670 - 2674, 2009-11

15
Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM

Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Kim, Sung-Ho; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.53, no.3, pp.389 - 391, 2009-03

16
Vertically Integrated Nanowire-Based Unified Memory

Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Choi, Yang-Kyu, NANO LETTERS, v.16, no.9, pp.5909 - 5916, 2016-09

17
Vertically Integrated Nanowire-Based Zero-Capacitor Dynamic Random Access Memory

Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Choi, Yang-Kyu, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.1, pp.Q1 - Q5, 2017

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