Browse "School of Electrical Engineering(전기및전자공학부)" by Subject 1/f noise

Showing results 13 to 17 of 17

13
Low-power direct conversion transceiver for 915 MHz band IEEE 802.15.4b standard based on 0. 18 mu m CMOS technology

Nguyen, TK; Le, VH; Duong, QH; Han, SK; Lee, Sang-Gug; Seong, NS; Kim, NS; et al, ETRI JOURNAL, v.30, pp.33 - 46, 2008-02

14
RF CMOS LC-oscillator with source damping resistors

Yun, SJ; Cha, CY; Choi, HC; Lee, Sang-Gug, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.16, pp.511 - 513, 2006-09

15
Significance of gate oxide thinning below 1.5 nm on 1/f noise behavior in n-channel metal-oxide-semiconductor field-effect transistors under electrical stress

Mheen, B; Kim, M; Song, YJ; Hong, Songcheol, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.6A, pp.4943 - 4947, 2006-06

16
Sputtering pressure dependent bolometric properties of Ni1-xO thin films for uncooled bolometer applications

Kang, In-Ku; Reddy, Y. Ashok Kumar; Shin, Young Bong; Kim, Woo Young; Lee, Hee Chul, CERAMICS INTERNATIONAL, v.43, no.12, pp.9498 - 9504, 2017-08

17
적외선 센서의 볼로미터 저항체로 사용된 다결정 실리콘 박막에 발생하는 TCR 및 1/f Noise의 최적화 방법에 관한 연구 = A research on how to optimize the level of the TCR and 1/f noise which occur in the polycrystalline silicon film used as a bolometer resistorlink

양진영; Yang, Jin-Young; et al, 한국과학기술원, 2006

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